savantic semiconductor product specification silicon npn power transistors 2SC2429 d escription with to-3 package high voltage ,high speed wide area of safe operation applications high speed switching converters and inverters pinning (see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta= ) symbol parameter conditions max unit v cbo collector-base voltage open emitter 450 v v ceo collector-emitter voltage open base 400 v v ebo emitter-base voltage open collector 7 v i c collector current 15 a i cm collector current-peak 20 a i b base current 5 a p t total power dissipation t c =25 150 w t j junction temperature 175 t stg storage temperature -65~175 fig.1 simplified outline (to-3) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2SC2429 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =1a ; r be = 9 400 v v (br)ebo emitter-base breakdown voltage i e =1ma ; i c =0 7 v v cesat collector-emitter saturation voltage i c =10a; i b =2a 0.45 1.0 v v besat base-emitter saturation voltage i c =10a; i b =2a 1.2 2.0 v i cbo collector cut-off current v cb =450v; i e =0 0.1 ma i ebo emitter cut-off current v eb =6v; i c =0 0.1 ma h fe dc current gain i c =10a ; v ce =5v 10 15 40 f t transition frequency i c =2a ; v ce =10v,f=10mhz 35 mhz c ob collector output capacitance i e =0 ; v cb =10v;f=1mhz 230 pf switching times t r rise time 0.15 0.5 s t stg storage time 1.20 2.5 s t f fall time v cc =150v,i c =10a i b1 =-i b2 =2a 0.10 0.3 s
savantic semiconductor product specification 3 silicon npn power transistors 2SC2429 package outline fig.2 outline dimensions
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